Qeb peb, qhov tsis ua haujlwm ntawm LED teeb ci qhov teeb meem vim li cas
LED lub teeb qhov chaw feem ntau muaj cov substrate, nti, ntim cov ntaub ntawv (nrog rau phosphor), muaj pes tsawg tus lens, ib co modules kuj muaj cov cua kub thiab thermal silica, nrov ntim txoj kev yog DOB thiab COB. Vim tias qhov pom kev LED coj los ua qauv tsim muaj ntau haiv neeg thiab kev sib txawv ntawm lub complexity, yog li qhov ua rau tsis ua hauj lwm kuj yog ntau heev, feem ntau yog cov hauv qab no:
1. Ntim khoom degradation
LED nyob hauv txhua txhua hnub ntawm txoj haujlwm, lub sijhawm ntev yuav ua rau lub xiav thiab lub zog GaNo hauv cov hlua ntawm cov hluav taws xob los ntawm kev sib txuas ntawm ultraviolet hluav taws xob thiab kub nce los ntawm LED sab nrauv ntim khoom (xws li epoxy resin) Muaj ib tug loj txo nyob rau hauv lub optical transparency ntawm ntau polymers, uas ua rau ib tug txo nyob rau hauv lub luminous ntawm LED.
Rau qhov degradation ntawm lub ntim cov khoom yuav ua rau cov teeb pom kev zoo ntawm LED los txo qhov teeb meem no, DL.Barton li al tau ua kev tshawb fawb thiab kuaj. Cov kev ntsuam xyuas qhia tau tias thaum lub ambient kub ntawm cov LED yog 95 ℃ , tus tsav tam sim no siab tshaj 40mA, LED pn junction kub siab tshaj 145 ℃, qhov ntsuas kub no yog ua kom cov khoom ntim rau lub zog tseem ceeb ntawm lub cev. Yog hais tias cov khoom siv encapsulation carbonized txawm nyob rau hauv high mob tam sim no, ib qho yeeb tshuaj opaque yog tsim nyob rau ntawm qhov cuab yeej ntawm lub cuab yeej los yog ib txoj kev siv txoj kev tsim, ua rau lub cuab yeej ua tsis.
2. Pollutant welding
LED paug txuas rau cov txheej txheem, LED chip electrode yog qhov mob, roj, fiber, plua plav thiab lwm yam khoom uas tau ua los ntawm cov pa phem, ua rau tag nrho lossis tag nrho cov teeb meem ntawm cov teeb meem LED teeb meem tshwm sim los ntawm qhov tsis xws li, welding defects.
Raws li cov kev sim, thaum cov kab mob npog tag nrho cov laug sib sib zog nqus, cov hlau-dielectric-hlau qauv, uas tseem hu ua qhov chaw sib txuas, yog tsim ntawm lub weld. Nyob rau hauv txoj kev ntawm lub tshuab ci, vim muaj cov hlwv qhov chaw, LED chip peak wavelength luminous siv yuav raug txo kom zoo thaum 60%. Yog li ntawd, lub hnab pob welding defects rau kev ntsuam xyuas kev ntseeg tau tsim nyog heev.
3. Khoom siv lead ua los ntawm qhov ua tsis tiav
Nyob rau hauv cov tuam txhab dawb dawb feem ntau siv hauv cov khoom siv lead ua epoxy cob qhia, silicone reim, nyiaj yas, thiab peb muaj lawv cov kev zoo thiab qhov tsis zoo, hauv kev xaiv yuav tsum tau muab rau hauv tus account. Epoxy resin: Insulation yas thermal conductivity yog cov neeg pluag, tab sis qhov siab brightness; silicone insulation me ntsis: glue thermal nyhuv me ntsis zoo tshaj lub epoxy resin, siab ci, tab sis vim muaj ib qho kev faib ua feem ntawm silicon, cov kua silicone nti tom ntej ntxiv cov tshuaj silicone thiab fluorescent ntawm cov tshuaj epoxy yuav tsim ua ke ntawm qhov phenomenon, tom qab kub thiab txias siab yuav ua kom cov tev tawm ua rau lub teeb ci; silver yas thermal conductivity tshaj thawj ob yog zoo, koj yuav ntev lub neej ntawm LED chips, tab sis qhov nyiaj Absorption yog tus loj, ua rau tsis tshua pom kev. Rau ob-electrode xiav nti siv hauv cov yas siv yas siv tawv siv thaum tswj tus nqi ntawm cov kua nplaum tseem nruj heev, los yog nquag rau luv Circuit Court, ib qho kev cuam tshuam ncaj qha rau ntawm cov khoom tawm los. Yog li, rau ntau hom khoom ntaus ntawv, kom siv tau cov khoom siv lead ua sib txawv, thiaj li zoo dua txo qhov ntaus ntawv tsis ua hauj lwm los ntawm nws.
4. Phosphor tsis ua hauj lwm
Muaj ntau txoj hauv kev ua kom muaj lub LED dawb, feem ntau yog siv, qhov feem ntau paub tab yog tsim los ntawm cov LED nti los tsim kho daj phosphor daj phosphor, yog li cov phosphor khoom rau ntawm tej yam dawb ntawm attenuation dawb. Feem ntau cov phomphor dawb feem ntau hauv lub lag luam yog YAG aluminium garnet phosphor, silicate phosphor, nitride phosphor. Piv nrog cov xiav LED nti, qhov tsis ua hauj lwm ntawm phosphor yuav ua rau lub teeb ci ntsa iab acceleration, thiaj li txo lub neej ntawm LED. Cov kev ntsuam xyuas qhia tias cov phosphor ntawm qhov kub ntawm 80 ℃ , qhov ua rau kev ua kom tau zoo yuav raug txo los ntawm 2%, tom qab txias thiab rov qab, thiab qhov sij hawm luv luv no qhov kev kuaj pom tias LED kub yuav ua rau kev ua tau zoo ntawm cov phosphor, thiab LED ntev lub sij hawm Ua haujlwm ntawm kev kub muaj peev xwm, ua rau tsis tuaj yeem ua rau hauv phosphor, LED yuav tshwm ua xiav teeb meem pauv xiav.
Yog li ntawd, lub teeb dawb LED teeb attenuation los yog ib feem loj ntawm qhov vim li cas yog tias lub tshav kub kub hauv cov nyhuv ntawm degradation ceev ntawm kev ua haujlwm phosphor. Yog li ntawd, qhov zoo ntawm phosphor nws tus kheej muaj ib qho tseem ceeb heev rau ntawm lub cev luminous ntawm lub LED.
5. Ua tsis zoo los ntawm cov teeb meem kev kub ntxhov
LED yog lub nruab nrab ntawm cov khoom siv hluav ncaig, thiab LED nti deg thaj tsam me me, ua hauj lwm tam sim no, thiab kev teeb pom kev zoo feem ntau yuav tsum muaj ntau yam LED ua ke. LED ntom, ua rau high thermal ntom ntawm cov nti, thiab qhov nruab nrab ntawm qhov kub siab yuav ua rau txo lub teeb tso zis, nti kom ceev degeneration, ua kom lub neej ntaus ntawv. Cov lus 1 muab cov thermal conductivity ntawm ntau yam ntaub ntawv. Nws pom tau tias cov cuab yeej siv tam sim no hauv kev npaj ntawm lub hwj chim LED, cov khoom siv feem ntau paub tab, feem ntau siv sapphire substrate thermal conductivity ntawm tsuas yog 35 ~ 46W / (m × K), tsawg dua 1 /
Yog hais tias koj xav mus rau hauv tus account siv tswv yim ntawm cov xim drift ntawm cov teebmeem ntawm thermal tsim yuav tsum tau tseem txwv lub siab tshaj plaws hlws ris. Raws li cov LED tswv yim hluav taws xob tseem zoo ntxiv, cov hwj huam siv lub tshuab fais fab no los tso rau hauv kev siab dua, thiab tam sim no qhov teeb meem kub tau ua ib qho tseem ceeb txwv qhov kev loj hlob ntawm cov fais fab loj.
6.LEDGaN-based epitaxial material defects tshwm sim los ntawm tsis ua hauj lwm
Vim tias tsis muaj cov khoom siv substrate uas tau tshaj GaN, muaj ntau qhov teeb meem nyob rau hauv GaN films hauv feem ntau ntawm cov khoom siv tam sim no. GaN khoom thiab tam sim no mainstream substrate sapphire lattice tas mismatch tus nqi ntawm 14%, thaum txoj kev loj hlob ntawm GaN khoom ntawm lub sapphire substrate dislocation ntom ntawm 108 / cm3 ~ 1010 / cm3.
Nyob rau hauv qhov kev npaj ntawm LED, cov defects ntawm cov khoom yuav adsorb tus cab kuj, thiaj li tsim ib qho non-radiating composite chaw nyob rau hauv lub active txheej, uas nce lub nqus ntawm lub teeb, ua rau txo cov luminous efficiency ntawm cov LED. Thaum lub sijhawm no loj txaus, Tus neeg muaj tus kabmob yuav tuaj yeem tshwm ua hluav taws xob, tabsis nws yuav ua rau qis qis, ua haujlwm thermal pobzeb yuav ua rau qhov tsis muaj teebmeem, ua rau muaj kev kub ntxhov ntawm LED heterogunction. Cov hlau electrode txuas nrog lub cuab yeej ua raws li kev cuam tshuam ntawm hluav taws xob thiab thermal kev nyuab siab yuav tsiv raws cov dislocation, ua rau low-ohmic ohmic Circuit Court, uas yuav ua rau cov cuab yeej optical zog poob thiab tawm tam sim no nce. Yog li ntawd, los txhim kho cov ntaub ntawv zoo tshaj plaws, kom txo cov ntaub ntawv ntawm cov khoom hauv qhov kho tau zoo tuaj yeem txhim kho txoj kev ntseeg ntawm cov khoom siv.
7. Tsis ua hauj lwm los ntawm kev puas tsuaj ntawm electrostatic
Cov ntaub ntawv GaN muaj ntau qhov chaw sib tw ntawm 3.39 eV, siab heev. Yog li ntawd, qhov GaN-based LED chip nyob rau hauv nws cov khoom, tsheb thauj cov txheej txheem generated los ntawm electrostatic nqi yog ib qho yooj yim mus tsim thiab tsim ib lub siab electrostatic voltage. Tus qauv ntawm GaN-raws li lub cuab yeej ntawm cov sapphire substrate yog qhov tsawg heev rau cov kabmob electrostatic uas muaj peev xwm thiab yog raug rau kev tshem tawm electrostatic los ntawm nws tiam. Nyob rau hauv cov ntaub ntawv ntawm tsis muaj kev tiv thaiv zoo li qub, lub cev ntawm qhov hluav taws xob zoo li qub ua rau kom muaj kev tawg, LED pab cuam yog kev sib cais zoo li qub yuav ua rau tsis ua hauj lwm mus tas li.
8. P-hom GaN ohmic tiv tauj laus
Meneghesso thiab lwm tus, Hauv kev ntsuam xyuas ntawm txoj kev tsis ua hauj lwm ntawm GaN, los ntawm cov khoom siv ua ntej thiab tom qab kev degradation ntawm cov yam ntxwv IV, Meneghesso li al tias ntseeg hais tias cov kev hloov no yog vim P-GaN pob tshab duab thiab hlau hlau electrode ohmic contact nyob rau hauv tus cawv qaum tam sim no thiab tshav kub Degradation, ua rau muaj kev nce ntxiv hauv kev ua haujlwm, uas ua rau tam sim no-intensive nyhuv, uas ua rau lub luminous efficiency ntawm poob; nyob rau hauv cov ntaub ntawv ntawm kev txhaj tshuaj tiv thaiv tam sim no, qhov ntxeev yuav nce, uas ua rau muaj kev nce ntxiv mus. Yog li, ohmic hu rau cov hlau electrode ntawm P-GaN plays lub luag hauj lwm tseem ceeb hauv kev kho qhov muag ntawm LED.
Ntxiv rau cov nqe lus saum toj no, qhov tseem tshuav li cas rau kev tsis ua hauj lwm muaj xws li chip thiab substrate welding qhov, spallation, lens yellowing, cracking, nti qhib Circuit Court, luv Circuit Court thiab li nyob rau.
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